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| MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 15 W, non repetitive VGE = 15 V, TJ = 125C, RG = 15 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 135 90 180 10 ICM = 150 VCEK < VCES 560 150 -40 ... +150 V V V V A A A ms A Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. Typical Applications q q q q space and weight savings reduced protection circuits 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Insulating material: Al2O3 Mounting torque (module) (teminals) 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 12.7 9.6 50 130 4.6 Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 030 MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 7.5 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 3 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 75 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 5 mA mA 300 nA 2.2 5.5 0.75 0.33 100 50 650 50 12.1 10.5 0.44 2.7 V nF nF nF ns ns ns ns mJ mJ Inductive load, TJ = 125C IC = 75 A, VGE = 15 V VCE = 600 V, RG = 15 W with heatsink compound 0.22 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.2 1.7 2.5 1.8 150 95 62 200 0.9 V V A A A ns 0.45 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 13.6 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 6.5 mW Thermal Response Conduction VF IF IRM trr RthJC RthJS IF = 75 A, VGE = 0 V, IF = 75 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 75 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125C, VR = 600 V with heatsink compound IGBT (typ.) Cth1 = 0.20 J/K; Rth1 = 0.218 K/W Cth2 = 0.47 J/K; Rth2 = 0.005 K/W Free Wheeling Diode (typ.) Cth1 = 0.14 J/K; Rth1 = 0.443 K/W Cth2 = 0.26 J/K; Rth2 = 0.009 K/W (c) 2000 IXYS All rights reserved 2-4 MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 175 A 150 IC 125 TJ = 25C VGE=17V 15V 13V 11V 175 TJ = 125C A 150 IC 125 100 75 VGE=17V 15V 13V 11V 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 9V 50 25 0 0.0 9V 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 VCE = 20V 125 A IC TJ = 25C 300 A 250 IF 200 150 100 50 0 TJ = 125C TJ = 25C 100 75 50 25 0 5 6 7 8 9 10 VGE 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE 15 300 ns trr VCE = 600V IC = 75A A IRM trr 80 200 10 40 5 IRM TJ = 125C VR = 600V IF = 75A 100 100-12 0 0 100 200 300 QG 0 400 nC 0 0 200 400 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 40 mJ Eon Eon td(on) tr 160 ns 120 t 80 20 mJ Eoff 15 Eoff td(off) 800 ns 600 t 400 30 20 10 VCE = 600V VGE = 15V 10 VCE = 600V VGE = 15V RG = 15W TJ = 125C 40 5 RG = 15W 200 TJ = 125C 0 0 50 100 IC 0 0 0 50 100 IC tf 150 A 0 150 A Fig. 7 Typ. turn on energy and switching times versus collector current 25 mJ 200 ns 160 t 120 tr 80 40 0 56 Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 25 mJ 20 15 10 5 0 0 8 16 24 32 RG tf 2000 VCE = 600V VGE = 15V IC = 75A TJ = 125C 20 Eon VCE = 600V VGE = 15V IC = 75A TJ = 125C td(on) Eon td(off) ns 1600 t 1200 800 400 0 15 10 5 0 0 8 16 24 32 RG Eoff 40 48 W 40 48 W 56 Fig. 9 Typ. turn on energy and switching times versus gate resistor 200 A 1 K/W 0.1 ZthJC Fig.10 Typ. turn off energy and switching times versus gate resistor 160 ICM diode 120 80 40 0 0 200 400 600 800 1000 1200 V VCE RG = 15W TJ = 125C VCEK < VCES 0.01 0.001 0.0001 IGBT single pulse 100-12 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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